Thermal Transport in Monolayer GaN Nanoribbons

Undergraduate thesis research on doping, defects, and thermal transport in monolayer GaN nanoribbons.

ML
Mehedi Hossen Limon
Engineer · Talibul Ilm · Writer
· 1 min read · 109 words

Overview

Final-year thesis direction: thermal transport in monolayer gallium nitride (GaN) nanoribbons, including effects of doping and vacancy defects, using computational methods (equilibrium molecular dynamics / Stillinger–Weber potential, as described in the publication record).

Focus

  • Heat transport in nanoscale GaN structures
  • Influence of Al/In doping and defect configurations
  • Interpreting model results within stated assumptions

Numerical results and full methodology: see the published paper—not restated here.

Publication

Impact of Doping and Defects on Thermal Transport of Monolayer GaN Nanoribbons
IEEE · profile record: 18 December 2024
DOI: 10.1109/ICECE64886.2024.11024945

Confirm author list and abstract on the publisher page.

Skills

Scientific computing · materials modelling mindset · technical writing · evidence-based conclusions